- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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50
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 900V 56A | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 56 A | 135 mOhms | 3.5 V to 6.5 V | 375 nC | HyperFET | ||||
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40
In-stock
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IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET | |||||
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21
In-stock
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IXYS | MOSFET 650v/32A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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48
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 14 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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27
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET |
