- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,363
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | |||||||
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1,381
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | UniFET | ||||||
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1,955
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 33 A | 94 mOhms | Enhancement | |||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement |