PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
STWA40N95DK5	1+ $12.280 10+ $11.300 25+ $10.830 100+ $9.540		PDF RFQ	100 In-stock	STMicroelectronics	MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO...	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel		N-Channel	950 V	38 A	0.12 Ohms	3 V	100 nC	Enhancement
STW40N95DK5	1+ $12.070 10+ $11.100 25+ $10.640 100+ $9.380		PDF RFQ	100 In-stock	STMicroelectronics	MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO...	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	950 V	38 A	0.12 Ohms	3 V	100 nC	Enhancement
IXFT24N80P	1+ $9.520 10+ $8.610 25+ $8.210 100+ $7.120	GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 24 Amps 800V 0.4 Rds	30 V	SMD/SMT	TO-268-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	24 A	400 mOhms		100 nC	Enhancement	HyperFET
TK35A65W,S5X	1+ $6.500 10+ $5.850 50+ $5.330 100+ $4.810	GET PRICE VIEW	PDF RFQ		Toshiba	MOSFET MOSFET NChannel 068ohm DTMOS	30 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	650 V	35 A	68 mOhms	2.5 V to 3.5 V	100 nC	Enhancement
TK35N65W,S1F	1+ $7.150 10+ $6.430 25+ $5.860 100+ $5.290	GET PRICE VIEW	PDF RFQ		Toshiba	MOSFET MOSFET NChannel 068ohm DTMOS	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	650 V	35 A	68 mOhms	2.5 V to 3.5 V	100 nC	Enhancement