- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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830
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.85ohms 7A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 3.75 V | 38 nC | Enhancement | |||||
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439
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | ||||||
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100
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||||
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185
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||||
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98
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||||
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65
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||||
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792
In-stock
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Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | ||||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement | |||||
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1
In-stock
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STMicroelectronics | MOSFET N-Ch 850V 0.2Ohm typ 19A Zener-protected | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 19 A | 275 mOhms | 4 V | 38 nC |