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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,527
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 14A 9mOhm 39nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 8 mOhms | 39 nC | Enhancement | |||||
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385
In-stock
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onsemi | MOSFET 600V 0.95 OHM TO- 220FP | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
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357
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | 3 V | 39 nC | Enhancement | ||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement |