- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,930
In-stock
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STMicroelectronics | MOSFET 600V 8Ohm 1A N-Chnnl Zener SuperMESH | 30 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 400 mA | 8.5 Ohms | 7 nC | Enhancement | |||||
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GET PRICE |
32,420
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | 7 nC | Enhancement | ||||
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128
In-stock
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IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
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114
In-stock
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IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
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405
In-stock
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Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 30 V | Through Hole | PW-Mold2-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | 2.4 V | 7 nC | Enhancement |
