- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
627
In-stock
|
Fairchild Semiconductor | MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 108 mOhms | 4.1 V | 45 nC | UltraFET | ||||
|
|
784
In-stock
|
Fairchild Semiconductor | MOSFET 500V 10A N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 610 mOhms | 45 nC | Enhancement | |||||
|
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 700V 13.8A D2PAK-2 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 280 mOhms | 3 V | 45 nC | CoolMOS | ||||
|
|
65
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
|
|
996
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS, 21A TO220F | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 165 Ohms | 3 V | 45 nC |
