- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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113
In-stock
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IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | |||
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36
In-stock
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IXYS | MOSFET 8 Amps 1500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 7.5 A | 3.6 Ohms | 5 V | 250 nC | Enhancement | ||||
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18
In-stock
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IXYS | MOSFET 42 Amps 800V 0.15 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 40 A | 150 mOhms | 5 V | 250 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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4
In-stock
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IXYS | MOSFET 8 Amps 1500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | |||||
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56
In-stock
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IXYS | MOSFET Standard Linear Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement |
