- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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406
In-stock
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IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | |||||
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20
In-stock
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IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | |||
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16
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 120 mOhms | 2.5 V | 215 nC | Enhancement | |||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 130 mOhms | 3 V | 215 nC | Enhancement | |||||
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17
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 150 mOhms | 4 V | 215 nC | Enhancement | ||||||
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46
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 130 mOhms | 4 V | 215 nC | Enhancement | POWER MOS 8 | |||||
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5
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 31 A | 120 mOhms | 3 V | 215 nC | Enhancement |
