- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.4 Ohms (1)
- 105 mOhms (1)
- 120 mOhms (1)
- 140 mOhms (2)
- 145 mOhms (1)
- 170 mOhms (2)
- 190 mOhms (1)
- 2 Ohms (1)
- 200 mOhms (3)
- 230 mOhms (1)
- 240 mOhms (3)
- 250 mOhms (1)
- 270 mOhms (2)
- 330 mOhms (1)
- 350 mOhms (1)
- 40 mOhms (1)
- 400 mOhms (1)
- 420 mOhms (2)
- 520 mOhms (1)
- 570 mOhms (1)
- 600 mOhms (2)
- 950 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | |||
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88
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | |||
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55
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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91
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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95
In-stock
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IXYS | MOSFET 1500V High Voltage Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
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51
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 52 A | 120 mOhms | Polar2 HiPerFET | ||||||
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110
In-stock
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IXYS | MOSFET 500V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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9
In-stock
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IXYS | MOSFET 10 Amps 1000V 1.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | - 3.5 V | 130 nC | Enhancement | ||||
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8
In-stock
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IXYS | MOSFET 600V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 190 mOhms | 5 V | 102 nC | Enhancement | PolarHV, HiPerFET | |||
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3
In-stock
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IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | ||||
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30
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | ||||||
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12
In-stock
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IXYS | MOSFET 20 Amps 800V 0.52 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 520 mOhms | 5 V | 86 nC | Enhancement | PolarHV, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | Enhancement | HyperFET | |||||
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120
In-stock
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IXYS | MOSFET 600V 26A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | HyperFET | ||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 42 A | 145 mOhms | Polar2 HiPerFET | ||||||
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VIEW | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 20 Amps 1000V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 570 mOhms | 6.5 V | 126 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 20 Amps 600V 0.35 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 350 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 21 Amps 500V 0.25 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 250 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 240 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 40 Amps 500V 0.14W Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 140 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 23 Amps 800V 0.40W Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 420 mOhms | Enhancement |
