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- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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- 10.5 nC (2)
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- 31.5 nC (1)
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- 34 nC (2)
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- 39 nC (1)
- 4.3 nC (2)
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- 41 nC (4)
- 42 nC (3)
- 430 nC (1)
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- 45 nC (3)
- 46 nC (1)
- 50 nC (1)
- 54 nC (4)
- 56 nC (3)
- 60 nC (1)
- 68 nC (3)
- 75 nC (3)
- 8.3 nC (3)
114 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,102
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | ||||
|
|
885
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 140 mOhms | Enhancement | SupreMOS | |||||
|
|
900
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29.7 A | 58 mOhms | 5 V | 210 nC | |||||
|
|
219
In-stock
|
IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement | ||||
|
|
263
In-stock
|
IXYS | MOSFET 650V/145A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 145 A | 17 mOhms | 2.7 V | 355 nC | Enhancement | HiPerFET | ||||
|
|
432
In-stock
|
IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
|
|
397
In-stock
|
IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
|
|
880
In-stock
|
IXYS | MOSFET MOSFET 650V/34A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | ||||
|
|
53,920
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||||
|
|
260
In-stock
|
IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 64 A | 51 mOhms | 3 V | 143 nC | Enhancement | ||||
|
|
508
In-stock
|
Fairchild Semiconductor | MOSFET SprFET2 650V 190mohm FRFET TO247 longlead | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 168 mOhms | 5 V | 60 nC | SuperFET II | ||||
|
|
979
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | ||||||
|
|
430
In-stock
|
IXYS | MOSFET MOSFET 650V/150A Ultra Junction X2 | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 150 A | 17 mOhms | 2.7 V | 430 nC | Enhancement | ||||
|
|
736
In-stock
|
STMicroelectronics | MOSFET N-Ch, 650V-1ohm Zener SuperMESH 6.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.4 A | 1.2 Ohms | 3.75 V | 41 nC | Enhancement | ||||
|
|
696
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | |||||
|
|
567
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 14 A | 424 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
|
|
2,065
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.7 A | 650 mOhms | 3 V | 21 nC | CoolMOS | ||||
|
|
875
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
|
|
305
In-stock
|
IXYS | MOSFET 650V/34A Ultra Junction X2-Class | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 34 A | 105 mOhms | 2.7 V | 56 nC | Enhancement | |||||
|
|
138
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||||
|
|
48
In-stock
|
IXYS | MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Si | N-Channel | 650 V | 76 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||||
|
|
100
In-stock
|
IXYS | MOSFET 650V/80A Ultra Junction X2-Class | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 80 A | 38 mOhms | 2.7 V | 140 nC | Enhancement | HiPerFET | ||||
|
|
793
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
38,800
In-stock
|
Fairchild Semiconductor | MOSFET 650V 15A 0.44OHMS NCH POWER TRENCH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 440 mOhms | Enhancement | ||||||
|
|
GET PRICE |
8,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | |||||
|
|
31
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 69 A | 33 mOhms | 3 V | 110 nC | Enhancement | CoolMOS | |||
|
|
778
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Ch Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | ||||||
|
|
214
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | |||||
|
|
227
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 4 A | 850 mOhms | 3 V | 8.3 nC | Enhancement | |||||
|
|
170
In-stock
|
IXYS | MOSFET MOSFET 650V/46A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 76 mOhms | 2.7 V | 75 nC | Enhancement | HiPerFET |
