- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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869
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
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501
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
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883
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||
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865
In-stock
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STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||
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443
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18.5 A | 380 mOhms | Enhancement | QFET |
