- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,283
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | Enhancement | |||||
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880
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | Enhancement | |||||
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382
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 13A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 258 mOhms | 4 V | 30.4 nC | SupreMOS | ||||
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125
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | |||||
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944
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC | Enhancement | |||||
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717
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/13A/QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 390 mOhms | Enhancement | ||||||
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673
In-stock
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Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 540 mOhms | Enhancement | QFET | |||||
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333
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.48ohms Zener SuperMESH 13A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 3.75 V | 66 nC | Enhancement | ||||
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639
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 13A 235mOhm 25nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 13 A | 235 mOhms | 25 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET 26 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 13 A | 630 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.42 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 420 mOhms | 5 V | 105 nC | Enhancement | HyperFET | |||
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40
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 13 A | 800 mOhms | 4 V | 80 nC | Enhancement | |||||
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372
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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42,700
In-stock
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onsemi | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 500 V | 13 A | 270 mOhms | 5 V | 50 nC | PolarHV | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.48 Ohm 13A SuperMESH | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 550 mOhms | 66 nC |
