- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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907
In-stock
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Fairchild Semiconductor | MOSFET N-CH/150V/45A/Q-FETI | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45 A | 40 mOhms | Enhancement | QFET | ||||||
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990
In-stock
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Fairchild Semiconductor | MOSFET N-CH/150V/45A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45 A | 40 mOhms | Enhancement | QFET | ||||||
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72
In-stock
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IXYS | MOSFET 500V 80A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 72 mOhms | Enhancement | HyperFET | ||||||
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32
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 94 mOhms | 145 nC | HyperFET | ||||||||
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16
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 120 mOhms | 2.5 V | 215 nC | Enhancement | ||||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 130 mOhms | 3 V | 215 nC | Enhancement | ||||||
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17
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 150 mOhms | 4 V | 215 nC | Enhancement | |||||||
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46
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 130 mOhms | 4 V | 215 nC | Enhancement | POWER MOS 8 | ||||||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | |||||
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49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |