- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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432
In-stock
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IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 120 A | 43 mOhms | Polar2 HiPerFET |
