- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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447
In-stock
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Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
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383
In-stock
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Fairchild Semiconductor | MOSFET 650V SUPER FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | SuperFET | |||||
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721
In-stock
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Fairchild Semiconductor | MOSFET UniFET1 300V N-chan MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 70 mOhms | 5 V | 60 nC | UniFET | ||||
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4,405
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 40 A | 70 mOhms | Enhancement | QFET | |||||
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125
In-stock
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IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | ||||||
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49
In-stock
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IXYS | MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 80 A | 70 mOhms | 5 V | 190 nC | HyperFET | ||||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 48 A | 70 mOhms | 2 V | 225 nC | Enhancement |
