- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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886
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
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743
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
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850
In-stock
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IXYS | MOSFET 500V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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2,772
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
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GET PRICE |
16,840
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
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1,900
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||||
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1,531
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | ||||||
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142
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | ||||
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132
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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55
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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58
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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51
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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113
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 30 A | 170 mOhms | 4 V | 115 nC | Enhancement | POWER MOS 8 | ||||
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25
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 49 A | 170 mOhms | 3 V | 305 nC | Enhancement | |||||
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22
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30 A | 170 mOhms | 140 nC | Enhancement | ||||||
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900
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 16A | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 170 mOhms | Enhancement | SupreMOS | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
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65
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement |
