- Manufacture :
- Mounting Style :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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38,850
In-stock
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Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 16 A | 220 mOhms | Enhancement | |||||||
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1,127
In-stock
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Fairchild Semiconductor | MOSFET UniFETII 500V 22A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 220 mOhms | Enhancement | UniFET | ||||||
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702
In-stock
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Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | ||||
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113
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | ||||
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57
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 37 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | ||||
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214
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | ||||||
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1,800
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38A | 30 V | Chassis Mount | SOT-227-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 220 mOhms | 264 nC | HyperFET | |||||||
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29
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A | 30 V | Through Hole | PLUS-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 264 nC | HyperFET | |||||||
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110
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | |||||
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38
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | |||||
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70
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET |