- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,085
In-stock
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Fairchild Semiconductor | MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 500 V | 15 A | 330 mOhms | Enhancement | |||||||
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1,698
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | 3 V to 5 V | 17.8 nC | SupreMOS | |||||
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658
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | |||||||
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445
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 2.75 Ohm 17.5A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | |||||||
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592
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .275Ohm 17.5A Zener-protect | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 3 V | 40 nC | Enhancement | |||||
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202
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | |||||||
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186
In-stock
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Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 330 mOhms | 3.5 V | 30 nC | Enhancement | |||||
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64
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | ||||
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87
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | ||||
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88
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | ||||
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82
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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37
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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3
In-stock
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IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | |||||
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113
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.33ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 330 mOhms | 2.5 V to 3.5 V | 25 nC | Enhancement | ||||||
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9
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 37 A | 330 mOhms | 4 V | 305 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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VIEW | IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | Depletion | |||||||
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15
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .28Ohm typ 17.5A Zener-protect | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 4 V | 48 nC |