- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 490 mOhms | 140 nC | HyperFET | ||||||
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VIEW | Toshiba | MOSFET N-ch 500V 20A 0.480 ohm | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 15 A | 490 mOhms | Enhancement |
