- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,192
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12.5 A | 430 mOhms | Enhancement | QFET | |||||
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1,843
In-stock
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Fairchild Semiconductor | MOSFET N-CH/250V/9A/QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | ||||||
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994
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | QFET | |||||
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1,354
In-stock
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Fairchild Semiconductor | MOSFET 250V 8.8A N-Chan | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 8.8 A | 430 mOhms | Enhancement | ||||||
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19
In-stock
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IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 430 mOhms | 6.5 V | 197 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 430 mOhms | 2.5 V | 20 nC | Enhancement |
