- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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150
In-stock
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IXYS | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.7 Ohms | Enhancement | ||||||
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1,480
In-stock
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Fairchild Semiconductor | MOSFET 600V 4.5A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.7 Ohms | 3 V | 14.5 nC | UniFET FRFET | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.7 Ohms | 3.75 V | 22 nC | Enhancement | SuperMesh | |||
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67
In-stock
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Toshiba | MOSFET N-ch 600V 3.5A TO-220SIS | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.7 Ohms | 2.4 V to 4.4 V | 11 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.7 Ohms | Enhancement |
