- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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125
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET NCH 6V 7A FDMESH FDMesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 700 mOhms | Enhancement | ||||||
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25,000
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 5.5 A | 700 mOhms | Enhancement | ||||||
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626
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 700 mOhms | Enhancement | UniFET | |||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.72 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | |||||
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14,200
In-stock
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Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement |
