- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.5 A (1)
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- 9 A (4)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
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- 800 mOhms (5)
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- 870 mOhms (1)
- 880 mOhms (1)
- 90 mOhms (6)
- 910 mOhms (1)
- 950 mOhms (3)
- 980 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (4)
- 10.5 nC (3)
- 112 nC (1)
- 115 nC (1)
- 12 nC (1)
- 12.5 nC (4)
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- 13 nC (3)
- 13.4 nC (3)
- 130 nC (2)
- 145 nC (3)
- 148 nC (2)
- 150 nC (3)
- 16 nC (1)
- 16.5 nC (3)
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- 21.5 nC (1)
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- 29 nC (3)
- 290 nC (3)
- 3 nC (3)
- 30.4 nC (1)
- 300 nC (4)
- 305 nC (5)
- 31.5 nC (1)
- 32 nC (11)
- 33 nC (4)
- 330 nC (3)
- 340 nC (3)
- 38 nC (1)
- 39 nC (1)
- 40 nC (7)
- 41 nC (2)
- 43 nC (3)
- 44 nC (1)
- 45 nC (1)
- 46 nC (4)
- 48 nC (1)
- 51 nC (2)
- 54 nC (2)
- 56 nC (1)
- 60 nC (1)
- 68 nC (3)
- 7.5 nC (2)
- 72 nC (1)
- 80 nC (5)
- 86 nC (1)
- 9.5 nC (3)
- 90 nC (1)
- 92 nC (1)
154 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,841
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
4,975
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | ||||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | ||||
|
|
869
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOST | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 112 nC | |||||
|
|
342
In-stock
|
Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 79 mOhms | 4 V | 187 nC | SuperFET | ||||
|
|
25,820
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
4,634
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | ||||
|
|
967
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 0.41Ohm typ. 12A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 12 A | 410 mOhms | 4 V | 40 nC | |||||
|
|
2,804
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 7.5 nC | Enhancement | ||||
|
|
1,338
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | ||||
|
|
33,260
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | Enhancement | ||||
|
|
623
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | ||||
|
|
1,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
|
|
2,000
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
|
|
1,569
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 950 mOhms | 4 V | 16.5 nC | Enhancement | ||||
|
|
599
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
|
|
2,743
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | |||||
|
|
1,323
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
|
|
3,900
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
|
|
721
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
|
|
106,800
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | |||||
|
|
615
In-stock
|
STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | ||||
|
|
2,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 3.5 Ohms | 4 V | 12.5 nC | Enhancement | ||||
|
|
977
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | ||||
|
|
886
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | ||||
|
|
994
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
|
|
382
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 13A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 258 mOhms | 4 V | 30.4 nC | SupreMOS | ||||
|
|
412
In-stock
|
Fairchild Semiconductor | MOSFET SUPREMOS 22A-TO247 | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | 4 V | 45 nC | SupreMOS | |||||
|
|
979
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | ||||||
|
|
2,100
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC |
