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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement | |||||
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24
In-stock
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IXYS | MOSFET 20 Amps 800V 0.29 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 290 mOhms | 5 V | 150 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | ||||
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16
In-stock
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IXYS | MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 150 V | 53 A | 20 mOhms | 4.5 V | 150 nC | TrenchT2 | |||||
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2
In-stock
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IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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58
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | |||||||
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36
In-stock
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Microsemi | MOSFET Power MOSFET | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 60 A | 45 mOhms | 3 V | 150 nC | Enhancement | ||||||
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57
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 18 A | 600 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | ||||||
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47
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 25 A | 310 mOhms | 3 V | 150 nC | Enhancement | ||||||
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48
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 17 A | 670 mOhms | 2.5 V | 150 nC | Enhancement | ||||||
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13
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 17 A | 670 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | |||||
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47
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 23 A | 400 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 |