- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,326
In-stock
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STMicroelectronics | MOSFET N-Ch, 700V-1ohm Zener SuperMESH 7.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | 3.75 V | 48 nC | Enhancement | |||||
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326
In-stock
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onsemi | MOSFET NCH 10V DRIVE SERIES | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 1700 V | 3 A | 8.2 Ohms | 48 nC | |||||||||
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241
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | |||||
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5
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | ||||||
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25,000
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | |||||
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40
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | ||||||
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86
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||||
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15
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .28Ohm typ 17.5A Zener-protect | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 4 V | 48 nC |