- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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314
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 7 A | 1.9 Ohms | 3 V to 5 V | 47 nC | Enhancement | ||||
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798
In-stock
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Fairchild Semiconductor | MOSFET TO220F, 250V, NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 58 mOhms | 5 V | 47 nC | Enhancement | UniFET | |||
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407
In-stock
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onsemi | MOSFET NFET 600V 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 650 mOhms | 47 nC | ||||||
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993
In-stock
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onsemi | MOSFET NFET TO220FP 600V 7. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 980 mOhms | 3 V | 47 nC | Enhancement | ||||
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96
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | 6 V | 47 nC | Enhancement | Polar, HiPerFET | ||||
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927
In-stock
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STMicroelectronics | MOSFET N Ch 600V 0.35 Ohm Zener SuperMESH 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11 A | 480 mOhms | 47 nC | Enhancement |
