- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.56 A (1)
- - 2.1 A (1)
- - 2.7 A (2)
- - 2.8 A (1)
- - 3.1 A (1)
- - 3.6 A (1)
- - 3.7 A (1)
- - 5.7 A (1)
- - 6.6 A (1)
- - 9.4 A (1)
- 1 A (4)
- 1.2 A (1)
- 1.4 A (1)
- 1.5 A (2)
- 1.6 A (2)
- 1.7 A (2)
- 1.8 A (2)
- 1.9 A (3)
- 10 A (2)
- 10.2 A (1)
- 11 A (1)
- 11.1 A (1)
- 11.5 A (1)
- 14 A (5)
- 15 A (1)
- 16 A (1)
- 17 A (3)
- 18 A (4)
- 2 A (10)
- 2.1 A (1)
- 2.2 A (2)
- 2.3 A (1)
- 2.4 A (2)
- 2.5 A (4)
- 2.6 A (2)
- 2.7 A (1)
- 2.8 A (1)
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- 23 A (1)
- 24 A (3)
- 3 A (11)
- 3.5 A (3)
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- 3.9 A (3)
- 31 A (1)
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- 4 A (7)
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- 4.4 A (6)
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- 4.6 A (3)
- 4.8 A (1)
- 41 A (1)
- 44 A (5)
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- 5 A (5)
- 5.1 A (1)
- 5.4 A (2)
- 5.5 A (3)
- 5.7 A (1)
- 5.8 A (1)
- 59 A (2)
- 6 A (7)
- 6.1 A (1)
- 6.2 A (2)
- 6.5 A (1)
- 6.8 A (1)
- 60 A (2)
- 62 A (2)
- 7 A (4)
- 7.3 A (1)
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- 8 A (5)
- 800 mA (1)
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- 900 mA (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (7)
- 1.05 Ohms (2)
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- 280 mOhms (2)
- 3 Ohms (1)
- 3.1 Ohms (2)
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- 3.6 Ohms (2)
- 3.7 Ohms (1)
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- 32 mOhms (3)
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- 360 mOhms (1)
- 380 mOhms (5)
- 399 mOhms (1)
- 4 Ohms (1)
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- 7.1 Ohms (1)
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- 890 mOhms (1)
- 9 Ohms (1)
- 90 mOhms (1)
- 900 mOhms (1)
- 950 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (3)
- 10.5 nC (3)
- 11 nC (5)
- 12 nC (7)
- 12.5 nC (1)
- 12.6 nC (1)
- 13 nC (4)
- 13.4 nC (1)
- 13.9 nC (1)
- 14 nC (1)
- 14.3 nC (1)
- 15 nC (5)
- 16 nC (4)
- 16.5 nC (1)
- 17 nC (4)
- 17.8 nC (1)
- 18 nC (7)
- 18.5 nC (1)
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- 2.63 nC (1)
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- 25 nC (6)
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- 3 nC (1)
- 3.9 nC (1)
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- 31 nC (1)
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- 4 nC (2)
- 4.3 nC (1)
- 4.6 nC (1)
- 4.8 nC (1)
- 4.9 nC (1)
- 5 nC (1)
- 57 nC (2)
- 60 nC (8)
- 7 nC (2)
- 7.5 nC (1)
- 7.7 nC (1)
- 70 nC (3)
- 72 nC (2)
- 76 nC (2)
- 8.3 nC (1)
- 8.6 nC (1)
- 9.3 nC (1)
- 9.5 nC (2)
- 9.8 nC (1)
- Applied Filters :
185 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,488
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.38 Ohms | 3 V | 8.6 nC | Enhancement | ||||
|
|
2,206
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
|
|
2,687
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
|
|
2,359
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
|
|
2,495
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||||
|
|
346
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
11,072
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-CH MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 900 mOhms | Enhancement | ||||||
|
|
8,273
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1 Ohms | Enhancement | ||||||
|
|
6,324
In-stock
|
Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | |||||
|
|
7,399
In-stock
|
Fairchild Semiconductor | MOSFET TO-252 DPAK P-CH 60V | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.4 A | 185 mOhms | Enhancement | QFET | |||||
|
|
9,369
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V/2A/A.QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 3.6 Ohms | Enhancement | ||||||
|
|
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 5.7 A | 690 mOhms | Enhancement | ||||||
|
|
6,978
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.8 A | 2.5 Ohms | Enhancement | ||||||
|
|
5,832
In-stock
|
Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.8 A | 6.3 Ohms | Enhancement | ||||||
|
|
38,850
In-stock
|
Fairchild Semiconductor | MOSFET HIGH VOLTAGE | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 16 A | 220 mOhms | Enhancement | ||||||
|
|
GET PRICE |
46,790
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch adv QFET V2 Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 140 mOhms | Enhancement | |||||
|
|
6,472
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 4.5 V | 14 nC | SuperFET II | |||||
|
|
300,300
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
4,637
In-stock
|
Fairchild Semiconductor | MOSFET P-CH/400V/1.56A/6.5OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 1.56 A | 6.5 Ohms | Enhancement | ||||||
|
|
2,434
In-stock
|
Fairchild Semiconductor | MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 3.2 Ohms | 3 V | 16 nC | Enhancement | SuperFET | |||
|
|
2,102
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 3.5 V | 34 nC | SuperFET II | ||||
|
|
3,891
In-stock
|
Fairchild Semiconductor | MOSFET 400V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 400 V | - 2.7 A | 3.1 Ohms | Enhancement | ||||||
|
|
1,579
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||||
|
|
1,698
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | 3 V to 5 V | 17.8 nC | SupreMOS | ||||
|
|
3,302
In-stock
|
Fairchild Semiconductor | MOSFET 650V SUPERFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 810 mOhms | Enhancement | SuperFET | |||||
|
|
3,620
In-stock
|
Fairchild Semiconductor | MOSFET 30V/16V 9.5/12MO NCH SINGLE | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 760 mOhms | Enhancement | ||||||
|
|
4,152
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||||
|
|
2,766
In-stock
|
Fairchild Semiconductor | MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | |||||
|
|
2,490
In-stock
|
Fairchild Semiconductor | MOSFET 600V 4.6A N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 950 mOhms | Enhancement | SuperFET | |||||
|
|
2,804
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 7.5 nC | Enhancement |
