- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,085
In-stock
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Fairchild Semiconductor | MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 500 V | 15 A | 330 mOhms | Enhancement | |||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | QFET | ||||||
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386
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | |||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 22 A | 125 mOhms | Enhancement | |||||||
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | ||||||
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434
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 82mOhms 70nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | ||||||
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800
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 15 mOhms | 5 V | 71 nC | Enhancement | |||||
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2
In-stock
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IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms |