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Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Tradename
FDA38N30
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RFQ
721
In-stock
Fairchild Semiconductor MOSFET UniFET1 300V N-chan MOSFET 30 V Through Hole TO-3PN-3 - 55 C + 125 C Tube 1 Channel Si N-Channel 300 V 38 A 70 mOhms 5 V 60 nC UniFET
NDD02N60Z-1G
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RFQ
1,473
In-stock
onsemi MOSFET NFET IPAK 600V 2.2A 4.8R 30 V Through Hole TO-247-3 - 55 C + 125 C Tube 1 Channel Si N-Channel 600 V 1.4 A 4 Ohms 4.5 V 10.1 nC  
NDD03N60ZT4G
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RFQ
9,990
In-stock
onsemi MOSFET NFET DPAK 2.6A 3.6R 30 V SMD/SMT TO-252-3 - 55 C + 125 C Reel 1 Channel Si N-Channel 600 V 2.6 A 3.3 Ohms 4.5 V 12 nC  
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