Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
C3M0065100K
1+
$12.160
100+
$11.690
500+
$11.120
RFQ
2,798
In-stock
Wolfspeed / Cree MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 - 4 V, + 15 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel SiC N-Channel 1000 V 35 A 65 mOhms 1.8 V 35 nC Enhancement
C3M0120100K
1+
$8.750
100+
$8.410
500+
$8.000
RFQ
554
In-stock
Wolfspeed / Cree MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 - 4 V, + 15 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel SiC N-Channel 1 kV 22 A 120 mOhms 1.8 V 21.5 nC Enhancement
C3M0075120K
1+
$12.500
100+
$12.180
500+
$11.590
RFQ
408
In-stock
Wolfspeed / Cree MOSFET SIC MOSFET 1200V 75 mOhm - 4 V, + 15 V Through Hole TO-247-4 - 55 C + 150 C Tube 1 Channel SiC N-Channel 1.2 kV 30 A 75 mOhms 1.7 V 51 nC Enhancement
C3M0120100J
1+
$17.060
100+
$15.080
250+
$13.770
RFQ
200
In-stock
Wolfspeed / Cree MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7 - 4 V, + 15 V Through Hole TO-263-7 - 55 C + 150 C Tube 1 Channel SiC N-Channel 1 kV 22 A 120 mOhms 1.8 V 21.5 nC Enhancement
C3M0065100J
1+
$23.710
100+
$20.970
250+
$19.150
RFQ
200
In-stock
Wolfspeed / Cree MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7 - 4 V, + 15 V Through Hole TO-263-7 - 55 C + 150 C Tube 1 Channel SiC N-Channel 1 kV 35 A 65 mOhms 1.8 V 35 nC Enhancement
Page 1 / 1