- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,839
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 28mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 30 mOhms | 22 nC | |||||||
|
|
4,113
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 56 A | 16 mOhms | 22 nC | |||||||
|
|
4,800
In-stock
|
Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | ||||
|
|
2,454
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | ||||
|
|
3,375
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 30 A | 28 mOhms | 2.5 V | 22 nC | Enhancement | |||
|
|
VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 10.5 mOhms | 22 nC | Enhancement |
