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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Packaging | Number of Channels | Pd - Power Dissipation | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Package | Factory Pack Quantity | RoHS | |
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2,450
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Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | - 5 V, + 23 V | Tube | 1 Channel | 133 W | N-Channel | 650 V | 35 A | 74 mOhms | 5.7 V | 28 nC | TO-247 | 30 | Green available |
