- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
24 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
999
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 4 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||||
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GET PRICE |
1,500
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MO... | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 3 A | 1.9 Ohms | 3 V | 5.3 nC | Enhancement | |||||
|
GET PRICE |
250
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
|
GET PRICE |
496
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 12 A | 0.37 Ohms | 3 V | 29 nC | Enhancement | |||||
|
GET PRICE |
30
In-stock
|
IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
|
GET PRICE |
891
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
|
GET PRICE |
1,000
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 165 mOhm, TO220F PKG | +/- 30 V | Through Hole | TO-220F-3 | - 55 C | + 150 C | 1 Channel | N-Channel | 650 V | 19 A | 140 mOhms | 2.5 V | 35 nC | Enhancement | ||||||
|
GET PRICE |
100
In-stock
|
STMicroelectronics | MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power M... | +/- 30 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 1050 V | 44 A | 0.1 Ohms | 3 V | 175 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8 A | 600 mOhms | 3 V | 11 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
GET PRICE |
2,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||||
|
GET PRICE |
2,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.75 Ohm typ., 7 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
GET PRICE |
2,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||||
|
GET PRICE |
600
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
|
GET PRICE |
2,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||||
|
GET PRICE |
2,500
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 3 V | 3.7 nC | Enhancement | ||||
|
GET PRICE |
450
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 40 mOhm | +/- 30 V | Through Hole | TO-247-3 | - 55 | + 150 C | Tube | 1 Channel | N-Channel | 650 V | 65 A | 35.4 mOhms | 2.5 V | 136 nC | Enhancement | |||||
|
GET PRICE |
12,500
In-stock
|
Vishay Semiconductors | MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 10 A | 0.275 Ohms | 3.4 V | 47 nC | Enhancement |