- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | ||||
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1,268
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 110 A | 20 mOhms | 4 V | 95 nC | PowerTrench | ||||||
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716
In-stock
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Fairchild Semiconductor | MOSFET 40V 110A 1.2mOhm N PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 1 MOhms | PowerTrench | ||||||||
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601
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 2 mOhms | 3 V | 131 nC | PowerTrench | |||||
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786
In-stock
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Fairchild Semiconductor | MOSFET MV7 60V N-channel Standard Gate PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 3.2 mOhms | 2 V | 126 nC | Enhancement | PowerTrench | ||||
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1,492
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | ||||||
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470
In-stock
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Vishay Semiconductors | MOSFET 55V 110A 158W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 0.0047 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | ||||
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74
In-stock
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IXYS | MOSFET 110Amps 150V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 2.5 V | 150 nC | Enhancement | |||||
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5
In-stock
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Fairchild Semiconductor | MOSFET 40V, 110A, 1.8m Ohm NChannel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 1.8 mOhms | 2.83 V | 107 nC | PowerTrench | |||||
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88
In-stock
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IXYS | MOSFET 110 Amps 55V 0.0066 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.6 mOhms | Enhancement | |||||||
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787
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 1.5 mOhms | 3 V | 207 nC | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement |