- Package / Case :
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (4)
- 1.4 mOhms (1)
- 1.5 mOhms (2)
- 1.58 mOhms (2)
- 1.6 mOhms (2)
- 1.7 mOhms (2)
- 2 mOhms (3)
- 2.1 mOhms (1)
- 2.3 mOhms (5)
- 2.4 mOhms (3)
- 2.5 mOhms (2)
- 2.7 mOhms (2)
- 2.9 mOhms (1)
- 3 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (2)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 4 mOhms (1)
- 4.6 mOhms (1)
- 5 mOhms (1)
- 5.5 mOhms (1)
- 5.7 mOhms (2)
- 5.8 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
43 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||||
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2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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19,680
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
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637
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
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1,809
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | Enhancement | OptiMOS | ||||||
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932
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | 2.3 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2 mOhms | 3.8 V | 206 nC | OptiMOS | |||||
|
1,090
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | |||||
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1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | ||||
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9,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
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4,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
|
654
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | ||||
|
917
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||||
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2,709
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | ||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | |||||
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656
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 2 mOhms | Enhancement | OptiMOS | ||||||
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287
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||||
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798
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | |||||
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218
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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582
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 2 V to 4 V | 79 nC | Enhancement | |||||
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1,311
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 1.55 V to 2.45 V | 21 nC | Enhancement | |||||
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225
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 1.2 V | 346 nC | Enhancement | OptiMOS | ||||
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475
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 68nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | Enhancement | ||||||
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370
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.1 mOhms | 2.2 V | 99 nC | Enhancement | |||||
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290
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5 mOhms | 4 V | 120 nC | ||||||
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311
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | OptiMOS | ||||
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1,867
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | ||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.3 mOhms | 2 V | 165 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5.8 mOhms | 4 V | 79 nC | ||||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS |