- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,370
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 120Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | ||||||
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2,465
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
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910
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 3.9 mOhm 180A STripFET | 20 V | SMD/SMT | H2PAK-2 | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 4.5 mOhms | 4 V | 114.6 nC | ||||||||
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4,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||||
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102
In-stock
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IXYS | MOSFET 3-Phase Full Bridge with Trench MOSFETs | 15 V | SMD/SMT | ISOPLUS-DIL-17 | - 55 C | + 175 C | 6 Channel | Si | N-Channel | 100 V | 120 A | 3.2 mOhms | 2 V | 88 nC | Enhancement | ||||||
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733
In-stock
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Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | |||||
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218
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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640
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 8 mOhms | 2 V | 131 nC | Enhancement | |||||
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790
In-stock
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Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET |