- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 1.55 V to 2.45 V | 21 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 120 A | 4 mOhms | 2.45 V | 21 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 21 nC |
