- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0011 Ohms (1)
- 0.0014 Ohms (3)
- 0.0015 Ohms (1)
- 0.0016 Ohms (1)
- 0.0028 Ohms (2)
- 0.003 Ohms (1)
- 0.0045 Ohms (1)
- 0.0079 Ohms (1)
- 1.2 mOhms (4)
- 1.21 mOhms (1)
- 1.5 mOhms (2)
- 1.58 mOhms (2)
- 1.6 mOhms (2)
- 1.7 mOhms (2)
- 10.5 mOhms (1)
- 2 mOhms (3)
- 2.1 mOhms (1)
- 2.3 mOhms (6)
- 2.4 mOhms (3)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 2.9 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (3)
- 3.5 mOhms (1)
- 3.7 mOhms (2)
- 4 mOhms (1)
- 4.6 mOhms (2)
- 5.8 mOhms (1)
- 6 mOhms (1)
- 6.1 mOhms (1)
- 7.5 mOhms (1)
- 7.7 mOhms (1)
- 8 mOhms (1)
- Qg - Gate Charge :
-
- 100 nC (1)
- 112 nC (1)
- 131 nC (1)
- 133 nC (1)
- 134 nC (2)
- 145 nC (1)
- 150 nC (1)
- 160 nC (1)
- 165 nC (3)
- 166 nC (2)
- 180 nC (1)
- 190 nC (1)
- 200 nC (1)
- 206 nC (4)
- 210 nC (2)
- 211 nC (2)
- 223 nC (2)
- 230 nC (1)
- 250 nC (2)
- 270 nC (4)
- 285 nC (1)
- 290 nC (1)
- 310 nC (1)
- 330 nC (2)
- 346 nC (2)
- 53 nC (1)
- 79 nC (2)
- 87 nC (2)
- 99 nC (1)
- Tradename :
60 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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6,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||
|
|
GET PRICE |
14,370
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 120Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 10.5 mOhms | Enhancement | |||||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
19,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
637
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | ||||
|
|
633
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
|
|
1,809
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | Enhancement | OptiMOS | |||||
|
|
1,062
In-stock
|
Vishay Semiconductors | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0028 Ohms | 1.5 V | 330 nC | Enhancement | TrenchFET | |||
|
|
932
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | 2.3 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2 mOhms | 3.8 V | 206 nC | OptiMOS | ||||
|
|
816
In-stock
|
STMicroelectronics | MOSFET 75V 3.5mOhm N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | ||||||
|
|
1,090
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | ||||
|
|
1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | |||
|
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9,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
800
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-CHAN PwrTrench | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | PowerTrench | |||||||
|
|
4,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
|
|
654
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
917
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | ||||
|
|
733
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||
|
|
579
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | ||||
|
|
656
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 2 mOhms | Enhancement | OptiMOS | |||||
|
|
287
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | ||||
|
|
616
In-stock
|
STMicroelectronics | MOSFET N-Ch 55 Volt 120 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 120 A | 6 mOhms | Enhancement | ||||||
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|
798
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | ||||
|
|
799
In-stock
|
Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.6 mOhms | 2.5 V | 165 nC | Enhancement | ||||
|
|
800
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | ||||
|
|
218
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
582
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 120 A | 4.6 mOhms | 2 V to 4 V | 79 nC | Enhancement | ||||
|
|
225
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 1.2 V | 346 nC | Enhancement | OptiMOS | |||
|
|
370
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.1 mOhms | 2.2 V | 99 nC | Enhancement | ||||
|
|
360
In-stock
|
Vishay Semiconductors | MOSFET 40V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0014 Ohms | 1.5 V | 285 nC | Enhancement | TrenchFET |
