- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,370
In-stock
|
Vishay Semiconductors | MOSFET Dual N-Channel 60V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 23.5 A, 23.5 A | 0.028 Ohms, 0.028 Ohms | 1.5 V, 1.5 V | 18.5 nC, 18.5 nC | Enhancement | TrenchFET | ||
|
|
VIEW | Siliconix / Vishay | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 7.5 A, - 7.5 A | 0.028 Ohms, 0.028 Ohms | - 2.5 V, - 2.5 V | 30 nC, 30 nC | Enhancement | TrenchFET |
