- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,351
In-stock
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Diodes Incorporated | MOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS | 8 V, 8 V | SMD/SMT | X2-DFN1310-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.11 A, 2.11 A | 195 mOhms | 450 mV | 1.6 nC | Enhancement | ||
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15,382
In-stock
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onsemi | MOSFET -20V -950mA P-Channel | 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 950 mA | 195 mOhms | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 100V DUAL N-CH HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.3 A | 195 mOhms | 3 V | 4.2 nC |
