- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,515
In-stock
|
Diodes Incorporated | MOSFET 40V P-CH MOSFET | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 8 A | 25 mOhms | - 1.3 V | 33.7 nC | Enhancement | ||||
|
|
3,674
In-stock
|
Diodes Incorporated | MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 150 mOhms | - 1.3 V | 12 nC | Enhancement | |||
|
|
5,654
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | |||
|
|
2,774
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 57 mOhms | - 1.3 V | 15.9 nC | Enhancement |
