- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6,407
In-stock
|
onsemi | MOSFET PCH 2.5V Power MOSFE | +/- 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 430 mOhms | - 1.3 V | 2.8 nC | Enhancement | ||||
|
2,891
In-stock
|
onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.5 A | 155 mOhms | - 1.3 V | 8.6 nC | Enhancement | ||||
|
4,815
In-stock
|
onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 230 mOhms | - 1.3 V | 5.6 nC | Enhancement | ||||
|
3,990
In-stock
|
onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 215 mOhms | - 1.3 V | 4.6 nC | Enhancement |