4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,435
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
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2,360
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
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2,490
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
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55
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS |
