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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STH145N8F7-2AG
1+
$2.800
10+
$2.380
100+
$1.900
500+
$1.670
1000+
$1.380
RFQ
996
In-stock
STMicroelectronics MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripF... 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 90 A 3.3 mOhms 2.5 V 96 nC Enhancement
TK65S04N1L,LQ
1+
$1.810
10+
$1.460
100+
$1.170
500+
$1.020
2000+
$0.787
RFQ
1,999
In-stock
Toshiba MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 65 A 3.3 mOhms 2.5 V 39 nC Enhancement
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