- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,652
In-stock
|
Diodes Incorporated | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 500 mA | 4 Ohms | 2.5 V | 0.3 nC, 0.28 nC | Enhancement | |||
|
|
4,207
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | 2.5 V | Enhancement | ||||
|
|
1,971
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 8.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8.9 A | 21.6 mOhms | 2.5 V | 4.9 nC | ||||
|
|
VIEW | Toshiba | MOSFET SMOS | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 2.5 V | Enhancement |
