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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	BSC160N10NS3 G	1+ $1.000 10+ $0.850 100+ $0.653 500+ $0.577 5000+ $0.404		PDF RFQ	23,565 In-stock	Infineon Technologies	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	42 A	13.9 mOhms	2 V	25 nC	Enhancement	OptiMOS
	FDMS86250	1+ $2.650 10+ $2.250 100+ $1.800 500+ $1.580 3000+ $1.220		PDF RFQ	2,024 In-stock	Fairchild Semiconductor	MOSFET PT5 150V/20V Nch Power Trench MOSFET		SMD/SMT	Power-56-8		+ 150 C	Reel		Si	N-Channel	150 V	42 A	33 mOhms		25 nC		PowerTrench
	BSC160N10NS3GATMA1	1+ $1.000 10+ $0.850 100+ $0.653 500+ $0.577 5000+ $0.404		PDF RFQ	5,529 In-stock	Infineon Technologies	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3	20 V	SMD/SMT	TDSON-8	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	42 A	13.9 mOhms	2 V	25 nC	Enhancement	OptiMOS

BSC160N10NS3 G

BSC160N10NS3 G

Infineon Technologies

MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3

Stock : 23,565

1+: $1.000

10+: $0.850

100+: $0.653

500+: $0.577

5000+: $0.404

FDMS86250

FDMS86250

Fairchild Semiconductor

MOSFET PT5 150V/20V Nch Power Trench MOSFET

Stock : 2,024

1+: $2.650

10+: $2.250

100+: $1.800

500+: $1.580

3000+: $1.220

BSC160N10NS3GATMA1

BSC160N10NS3GATMA1

Infineon Technologies

MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3

Stock : 5,529

1+: $1.000

10+: $0.850

100+: $0.653

500+: $0.577

5000+: $0.404

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