- Manufacture :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | |||||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | |||||
|
|
451
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 17.5mOhms 16.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement | ||||
|
|
126
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 2 V to 4 V | 42 nC | Enhancement | |||
|
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 17.5 mOhms | 42 nC | Enhancement |
