- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,593
In-stock
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Fairchild Semiconductor | MOSFET 100/20V Single N-Channel Power Trench Mosfet | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.3 A | 88 mOhms | 2 V | 5.2 nC | Enhancement | PowerTrench | ||
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4,106
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -1.17A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.17 A | 500 mOhms | - 2 V | 5.2 nC | Enhancement | |||
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4,781
In-stock
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Vishay Semiconductors | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 0.045 Ohms | 0.6 V | 5.2 nC | Enhancement | TrenchFET | ||
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VIEW | Nexperia | MOSFET PMN70XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.1 A | 70 mOhms | - 1 V | 5.2 nC | Enhancement | |||||
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2,089
In-stock
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IR / Infineon | MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.2 A | 270 mOhms | 5.2 nC |
