- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
1,652
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
2,500
In-stock
|
Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | |||
|
|
GET PRICE |
250
In-stock
|
Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V, 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.9 mOhms, 7.9 mOhms | 2 V, 2 V | 28 nC, 28 nC | Enhancement |
